Multiscale CFD Modeling of Area-Selective Atomic Layer Deposition: Application to Reactor Design and Operating Condition Calculation

Area-selective atomic layer deposition (ASALD) as a bottom-up nanopatterning technique has gained recognition for its ability to address misalignment issues in semiconductor manufacturing. This silico study investigates process operation conditions ASALD of SiO2/Al2O3 and reactor optimization by using multiscale computational fluid dynamics (CFD) modeling. Several designs were modeled Ansys Workbench their results compared ensure effective reagent separation homogeneous exposure reagents across the wafer. Annular reaction zones asymmetrical inlets enhanced uniform minimized intermixing, which allowed tolerate higher rotational speeds. Additionally, low rotation speeds high species mole fractions required complete cycle process. research provides insight into contributes further industrial versatility.